雙元探測(cè)器，大小與格式，基于高溫陶瓷兩元素。

信號(hào)：數(shù)字信號(hào)處理技術(shù)將數(shù)字值轉(zhuǎn)換為數(shù)字值。

Parameter Symbol Min. Typ. Max. Unit Remarks
Operating Voltage VDD 2.5 3.3 3.6 V
Supply Current IDD 3 μA VDD = 3V, no load
Input Low Voltage VSIL 0.2VDD V
Input High Voltage VSIH 0.8VDD V
Input Current ISI -1 +1 μA VSS < VIN < VDD
Data Clock Low Time tSL 200 2000 ns
Data Clock High Time tSH 200 2000 ns
Data In Hold Time tSHD 70 μs
Data Load Time tSLT 550 μs
DIRECT LINK
Input Low Voltage VDIL 0.2VDD V
Input High Voltage VDIH 0.8VDD V
Input Current IDI -1 +1 μA
Data Setup Time tDS 110 150 μs
Data Clock Low Time 1 tDL 200 2000 ns
Data Clock High Time 1 tDH 200 2000 ns
Sample Time tSMPL 2.0 14.6 ms (3 … 512) / fCLK
Bit Time 1 tBIT 23 μs
ADC Resolution 2 14 Bits Max Count = 214 -1
PIR ADC Sensitivity 6.5 μV/Count
Sensitivity of TAMB 2 80 Counts/K
Counts at 300K (27 degrees C) 5500 6400 7400 Counts
Sensitivity of VDD measurement 650 μV/Count
Output Range 2^13
2^14 –
511
Counts
LPF cutoff frequency f1 7 Hz
HPF cutoff frequency f2 0.44 Hz
Internal Clock Frequency fCLK 32 kHz